Solve your IGNOU Doubts
Solve your IGNOU Doubts
Question:

 

In the inclined crystal plane arrange the following sites in the order of increasing possibility of crystal growth site: terraces, kinks, ledges. 

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Question:
  • Nuclear isomerism 
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Question:
  • Internal conversion,
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Question:

Write the symmetries associated with the following 2-D defects:

i) Grain Boundary

ii) Twin Boundary

iii) Stacking Fault 

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Question:

 Determine the expected shell-model quadrupole moment of equation.

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Question:

Write the semi-empirical mass formula. On the basis of semi-empirical mass formula, derive the condition of stability of a given nucleus.

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Question:

 Calculate the third component of isospin T3 for equation and equation.

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Question:

List any three major differences between low energy equation scattering and equation scattering.

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Question:

 Explain and justify the observed deviations in magnetic dipole moment and quadrupole moment of deuteron.

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Question:

 For the nuclear charge density equation, compute the charge form factor and the mean square charge radius equation.

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Question:

 The mass defects for equation and equation are equation, and equation respectively. Calculate the corresponding atomic mass.

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Question:

 

Describe the various methods of creating point defects. Discuss the constructive (positive) effect of dislocations in materials. 

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Question:

Calculate the mass defect of Boron-10 and proton separation energy.
Given:

 

equation

 

equation

 

equation

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Question:

How do the interactions between the substrate and adsorbate atoms determine the growth mode of thin films? Describe the various modes of thin film growth. 

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Question:

What is green compaction in powder processing? How is the porosity of compacted piece reduced? 

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Question:

Given that the density of molten Ge is 5.60 g cm⁻³ calculate the amount of boron required to obtain 10 kg p-type Ge with dopant concentration of 10¹⁷ cm⁻³. Take density of boron = 2.34 g cm⁻³, atomic weight of boron = 10.811 and k₀ = 0.8. 

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Question:

Explain the difference between chemical vapour deposition and physical vapour deposition. What are the requirements of a material to be used as a holder for the charge in a thermal evaporation system? Mention any three materials used for the purpose. 

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Question:

With the help of appropriate diagrams describe the possible ways of accommodating the added alloying elements into a pure metal lattice for the following cases:

i) Limited solubility

ii) Good solubility. 

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Question:

 

 Show that the root mean square crow-flight distance for neutrons from an infinite plane source in an infinite medium is equation.

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Question:

Derive two-group diffusion equations for a critical homogeneous reactor in steady state.

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