Explain the construction and operation of Impact Ionization Avalanche TransitTime (IMPATT) diode used for microwave generation.

The Impact Ionization Avalanche Transit-Time (IMPATT) diode is a type of semiconductor device used for microwave generation. It is constructed using a three-layer structure: an n-type region, a p-type region, and an intrinsic region (also called the i-region). The i-region is typically a thin layer that separates the n-type and p-type regions. The diode is typically fabricated from materials like silicon or gallium arsenide, chosen for their _______ _____ _________ __________ __________ ___ ________ ___ _________.
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