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A Gunn diode is a transferred-electron device that operates without a p–n junction and is based on the bulk properties of certain semiconductors such as gallium arsenide (GaAs) and indium phosphide (InP). Its construction consists of a thin slab of n-type semiconductor material with very high doping concentration, sandwiched between two metallic ohmic contacts. The device has three regions: a highly doped n⁺ layer near the cathode, a moderately doped active n-region in the middle, and another highly doped n⁺ layer near the anode. The n⁺ regions ensure low-resistance ohmic contacts, while the central n-region is responsible for microwave generation. The entire structure is usually mounted on a heat sink because ___ ______ ___ _______ _____ ___ _____ ___ ______ _________.
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