Question

The intrinsic carrier concentration of a semiconductor is 3x1017 m-³. It is doped with a trivalent impurity with dopant atom density of 8x1018 m-³. The electron and hole mobilities are 0.5 m² V-1s-1 and 0.3 m² V-1s-1 respectively. Calculate its conductivity before and after the doping.

22 Jan 2025
Answer :
Word Count : 456

To calculate the conductivity of the semiconductor before and after doping, we will use the formula for electrical conductivity:

\[
\sigma = q \cdot (n \mu_e + p \mu_h)
\]

Where:
- \( \sigma \) is the conductivity,
- \( q \) is the charge of an electron (\(1.6 \times 10^{-19}\) C),
- \( n \) is the electron concentration,
- \( p \) is the hole concentration,
- \( \mu_e \) is the electron mobility, and
- \( \mu_h \) is the hole mobility.

### Before Doping:

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