Describe the formation of depletion layer in a p-n junction diode. Exp

Question

Describe the formation of depletion layer in a p-n junction diode. Explain the I-V characteristics of p-n junction in forward and reversed biased conditions.

22 Jan 2025

Answer :

Word Count : 277

In a p-n junction diode, the depletion layer is formed at the junction between the p-type and n-type semiconductors due to the diffusion of charge carriers. In the p-type region, there is a high concentration of holes (positive charge carriers), and in the n-type region, there is a high concentration of electrons (negative charge carriers). ______ _______ _____ ________ ________ ______ _____ _____ __________.
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